Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects ; volume:30 ; number:13 ; year:2020 ; extent:11
Advanced functional materials ; 30, Heft 13 (2020) (gesamt 11)
- Creator
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Huq, Tahmida N.
Lee, Lana C.
Eyre, Lissa
Li, Weiwei
Jagt, Robert
Kim, Chaewon
Fearn, Sarah
Pecunia, Vincenzo
Deschler, Felix
MacManus‐Driscoll, Judith L.
Hoye, Robert L. Z.
- DOI
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10.1002/adfm.201909983
- URN
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urn:nbn:de:101:1-2022061511094501405055
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:27 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Huq, Tahmida N.
- Lee, Lana C.
- Eyre, Lissa
- Li, Weiwei
- Jagt, Robert
- Kim, Chaewon
- Fearn, Sarah
- Pecunia, Vincenzo
- Deschler, Felix
- MacManus‐Driscoll, Judith L.
- Hoye, Robert L. Z.
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