Epitaxial growth of BaHfO3 buffer layer and its structure degeneration analysed by Raman spectrum
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2193-1801
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Epitaxial growth of BaHfO3 buffer layer and its structure degeneration analysed by Raman spectrum ; volume:5 ; number:1 ; day:3 ; month:11 ; year:2016 ; pages:1-5 ; date:12.2016
SpringerPlus ; 5, Heft 1 (3.11.2016), 1-5, 12.2016
- Creator
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Zheng, Jiahui
- Contributor
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Fan, Feng
Yan, Xiangfa
Lu, Yuming
Liang, Yu
Bai, Chuanyi
Liu, Zhiyong
Guo, Yanqun
Cai, Chuanbing
SpringerLink (Online service)
- DOI
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10.1186/s40064-016-3563-9
- URN
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urn:nbn:de:1111-2016112811353
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:49 AM CEST
Data provider
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Associated
- Zheng, Jiahui
- Fan, Feng
- Yan, Xiangfa
- Lu, Yuming
- Liang, Yu
- Bai, Chuanyi
- Liu, Zhiyong
- Guo, Yanqun
- Cai, Chuanbing
- SpringerLink (Online service)
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Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon
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