Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition ; volume:14 ; number:1 ; day:16 ; month:9 ; year:2024 ; pages:1-10 ; date:12.2024
Scientific reports ; 14, Heft 1 (16.9.2024), 1-10, 12.2024

Creator
Gu, Zhifeng
Shan, Feng
Liu, Jia
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-024-72560-3
URN
urn:nbn:de:101:1-2411292118204.443719343436
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:21 AM CEST

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Associated

  • Gu, Zhifeng
  • Shan, Feng
  • Liu, Jia
  • SpringerLink (Online service)

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