Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition ; volume:14 ; number:1 ; day:16 ; month:9 ; year:2024 ; pages:1-10 ; date:12.2024
Scientific reports ; 14, Heft 1 (16.9.2024), 1-10, 12.2024
- Creator
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Gu, Zhifeng
Shan, Feng
Liu, Jia
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-72560-3
- URN
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urn:nbn:de:101:1-2411292118204.443719343436
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:21 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Gu, Zhifeng
- Shan, Feng
- Liu, Jia
- SpringerLink (Online service)