Hysteresis and Photoconductivity of Few‐Layer ReSe 2 Field Effect Transistors Enhanced by Air Pressure

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Hysteresis and Photoconductivity of Few‐Layer ReSe 2 Field Effect Transistors Enhanced by Air Pressure ; day:14 ; month:06 ; year:2023 ; extent:10
Advanced electronic materials ; (14.06.2023) (gesamt 10)

Creator: Intonti, Kimberly
Faella, Enver
Viscardi, Loredana
Kumar, Arun
Durante, Ofelia
Giubileo, Filippo
Passacantando, Maurizio
Lam, Hoi Tung
Anastasiou, Konstantinos
Craciun, Monica F.
Russo, Saverio
Di Bartolomeo, Antonio

DOI: 10.1002/aelm.202300066

URN: urn:nbn:de:101:1-2023061515274216143959

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 11:03 AM CEST

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Associated

Intonti, Kimberly
Faella, Enver
Viscardi, Loredana
Kumar, Arun
Durante, Ofelia
Giubileo, Filippo
Passacantando, Maurizio
Lam, Hoi Tung
Anastasiou, Konstantinos
Craciun, Monica F.
Russo, Saverio
Di Bartolomeo, Antonio

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Hysteresis and Photoconductivity of Few‐Layer ReSe 2 Field Effect Transistors Enhanced by Air Pressure

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Other Objects (12)

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