Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO 2 Gate Oxide
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO 2 Gate Oxide ; day:30 ; month:09 ; year:2024 ; extent:7
Advanced electronic materials ; (30.09.2024) (gesamt 7)
- Creator
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Jeong, Jimin
Park, Yeon Su
Kang, Min‐Gu
Park, Byong‐Guk
- DOI
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10.1002/aelm.202400535
- URN
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urn:nbn:de:101:1-2410011407268.433807082085
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:22 AM CEST
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Associated
- Jeong, Jimin
- Park, Yeon Su
- Kang, Min‐Gu
- Park, Byong‐Guk
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Kampfgruppenhundertschaft im HFO
Electro-Magnetism, Magneto-Electricity, Thermo-Electricity.
Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Analysis of chemically synthesized HfO$_2$ nanoparticles towards their resistive switching properties
Magneto-optic Investigation of Magnetic Flux Penetration on a Nanosecond Timescale
Doped HfO x Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units
Arbeitskräftefluktuation HFO
Arbeitskräftefluktuation HFO
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Nanosecond magneto-optic study of a new instability in thin YBa2Cu3O7-x films
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