Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two‐Terminal Memristors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two‐Terminal Memristors ; day:15 ; month:09 ; year:2023 ; extent:11
Advanced functional materials ; (15.09.2023) (gesamt 11)
- Urheber
-
Nath, Shimul Kanti
Sun, Xiao
Nandi, Sanjoy Kumar
Chen, Xi
Wang, Zhongrui
Das, Sujan Kumar
Lei, Wen
Faraone, Lorenzo
Rickard, William D. A.
Elliman, Robert G.
- DOI
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10.1002/adfm.202306428
- URN
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urn:nbn:de:101:1-2023091515210396007680
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:57 MESZ
Datenpartner
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Beteiligte
- Nath, Shimul Kanti
- Sun, Xiao
- Nandi, Sanjoy Kumar
- Chen, Xi
- Wang, Zhongrui
- Das, Sujan Kumar
- Lei, Wen
- Faraone, Lorenzo
- Rickard, William D. A.
- Elliman, Robert G.
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