Photo-induced room-temperature gas sensing with a-IGZO based thin-film transistors fabricated on flexible plastic foil

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Abstract: We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO2 gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch
Notes
Sensors. 18, 2 (2018), article no. 358, DOI 10.3390/s18020358, issn: 1424-8220

Classification
Industrielle und handwerkliche Fertigung
Keyword
Gassensor
Dünnschichttransistor
Stickstoffdioxid

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2018
Creator
Knobelspies, Stefan
Bierer, Benedikt
Daus, Alwin
Takabayashi, Alain
Salvatore, Giovanni A.
Cantarella, Giuseppe
Ortiz Pérez, Alvaro
Wöllenstein, Jürgen
Palzer, Stefan
Tröster, Gerhard
Contributor

DOI
10.3390/s18020358
URN
urn:nbn:de:bsz:25-freidok-151336
Rights
Kein Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
25.03.2025, 1:42 PM CET

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Associated

Time of origin

  • 2018

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