Electrochemical Generation of Catalytically Active Edge Sites in C 2 N‐Type Carbon Materials for Artificial Nitrogen Fixation

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Electrochemical Generation of Catalytically Active Edge Sites in C 2 N‐Type Carbon Materials for Artificial Nitrogen Fixation ; day:16 ; month:09 ; year:2022 ; extent:9
Small ; (16.09.2022) (gesamt 9)

Creator: Zhang, Wuyong
Zhan, Shaoqi
Qin, Qing
Heil, Tobias
Liu, Xiyu
Hwang, Jinyeon
Ferber, Thimo H.
Hofmann, Jan P.
Oschatz, Martin

DOI: 10.1002/smll.202204116

URN: urn:nbn:de:101:1-2022091715065162547087

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:29 AM CEST

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Associated

Zhang, Wuyong
Zhan, Shaoqi
Qin, Qing
Heil, Tobias
Liu, Xiyu
Hwang, Jinyeon
Ferber, Thimo H.
Hofmann, Jan P.
Oschatz, Martin

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Electrochemical Generation of Catalytically Active Edge Sites in C 2 N‐Type Carbon Materials for Artificial Nitrogen Fixation

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Other Objects (12)

Electrochemical Generation of Catalytically Active Edge Sites in C₂N‐Type Carbon Materials for Artificial Nitrogen Fixation

A single n-type semiconducting polymer-based photo-electrochemical transistor

Direct Instrumental Identification of Catalytically Active Sites Using Electrochemical Scanning Tunneling Microscopy

Localized Electrosynthesis and Subsequent Electrochemical Mapping of Catalytically Active Metal–Organic Frameworks

n‐Type Fullerene‐Carbon Dots: Synthesis and Electrochemical and Photophysical Properties

Complementary Logic Circuits Based on High‐Performance n‐Type Organic Electrochemical Transistors

Selective electrochemical functionalization of the graphene edge

Green Synthesis of Lactone‐Based Conjugated Polymers for n‐Type Organic Electrochemical Transistors

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Catalytically Propelled Micro‐ and Nanoswimmers

Mixing Insulating Commodity Polymers with Semiconducting n‐type Polymers Enables High‐Performance Electrochemical Transistors

A checklist for reproducibility in electrochemical nitrogen fixation

Electrochemical Generation of Catalytically Active Edge Sites in C₂N‐Type Carbon Materials for Artificial Nitrogen Fixation

A single n-type semiconducting polymer-based photo-electrochemical transistor

Direct Instrumental Identification of Catalytically Active Sites Using Electrochemical Scanning Tunneling Microscopy

Localized Electrosynthesis and Subsequent Electrochemical Mapping of Catalytically Active Metal–Organic Frameworks

n‐Type Fullerene‐Carbon Dots: Synthesis and Electrochemical and Photophysical Properties

Complementary Logic Circuits Based on High‐Performance n‐Type Organic Electrochemical Transistors

Selective electrochemical functionalization of the graphene edge

Green Synthesis of Lactone‐Based Conjugated Polymers for n‐Type Organic Electrochemical Transistors

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Catalytically Propelled Micro‐ and Nanoswimmers

Mixing Insulating Commodity Polymers with Semiconducting n‐type Polymers Enables High‐Performance Electrochemical Transistors

A checklist for reproducibility in electrochemical nitrogen fixation

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A single n-type semiconducting polymer-based photo-electrochemical transistor

Direct Instrumental Identification of Catalytically Active Sites Using Electrochemical Scanning Tunneling Microscopy

Localized Electrosynthesis and Subsequent Electrochemical Mapping of Catalytically Active Metal–Organic Frameworks

n‐Type Fullerene‐Carbon Dots: Synthesis and Electrochemical and Photophysical Properties

Complementary Logic Circuits Based on High‐Performance n‐Type Organic Electrochemical Transistors

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Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

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A checklist for reproducibility in electrochemical nitrogen fixation

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