Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
-
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft ; volume:10 ; number:1 ; day:13 ; month:8 ; year:2024 ; pages:1-11 ; date:12.2024
Microsystems & nanoengineering ; 10, Heft 1 (13.8.2024), 1-11, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
-
Liu, Xu
Lv, Zhenxing
Liao, Zhefu
Sun, Yuechang
Zhang, Ziqi
Sun, Ke
Zhou, Qianxi
Tang, Bin
Geng, Hansong
Qi, Shengli
Zhou, Shengjun
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s41378-024-00737-x
- URN
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urn:nbn:de:101:1-2411010735189.550387232383
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:25 MESZ
Datenpartner
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Beteiligte
- Liu, Xu
- Lv, Zhenxing
- Liao, Zhefu
- Sun, Yuechang
- Zhang, Ziqi
- Sun, Ke
- Zhou, Qianxi
- Tang, Bin
- Geng, Hansong
- Qi, Shengli
- Zhou, Shengjun
- SpringerLink (Online service)
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