Toward efficient and industrially compatible fully textured perovskite silicon tandem solar cells : : controlled process parameters for reliable perovskite formation

Abstract: Capitalizing on the existing silicon industry, fully textured perovskite-silicon tandem solar cells have a great potential to penetrate the electricity market. While the use of textured silicon with large pyramid size (> 1 μm) enhances the power conversion efficiency (PCE), it also presents process complications. To achieve high performance, meticulous control of deposition parameters on textured silicon is required. This study provides a guideline for the use of the hybrid evaporation/spin-coating route to form high-quality perovskite absorbers. Using various characterization techniques, we highlight intrinsic differences between perovskite growth on flat versus textured substrates. Furthermore, we provide pathways to ensure a high perovskite phase purity, reveal mitigation strategies to avoid the formation of undesired dendritic perovskite structures, give guidelines to ensure photostability, and discuss the “misleading” effect of residual PbI2 on the perovskite photoluminescence response. A good understanding of the perovskite growth on textured silicon enables the fabrication of a tandem device with a PCE > 26% (without employing additives or surface treatments) and a good operational stability. The comprehensive guidelines in this study provide a better understanding of perovskite formation on textured silicon and can be transferred when upscaling the hybrid route perovskite deposition

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
Progress in photovoltaics. - 33, 1 (2025) , 86-99, ISSN: 1099-159X

Klassifikation
Elektrotechnik, Elektronik

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2024
Urheber
Er-Raji, Oussama
Bett, Alexander Jürgen
Lange, Stefan
Nagel, Henning
Bivour, Martin
Schultz-Wittmann, Oliver
Hagendorf, Christian
Hermle, Martin
Borchert, Juliane
Glunz, Stefan
Schulze, Patricia S. C.

DOI
10.1002/pip.3770
URN
urn:nbn:de:bsz:25-freidok-2542435
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:38 MESZ

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  • 2024

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