Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors ; volume:14 ; number:1 ; day:12 ; month:9 ; year:2019 ; pages:1-10 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (12.9.2019), 1-10, 12.2019
- Urheber
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Seo, Junseok
Cho, Kyungjune
Lee, Woocheol
Shin, Jiwon
Kim, Jae-Keun
Kim, Jaeyoung
Pak, Jinsu
Lee, Takhee
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1186/s11671-019-3137-1
- URN
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urn:nbn:de:101:1-2020012719432059753015
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:49 MESZ
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Beteiligte
- Seo, Junseok
- Cho, Kyungjune
- Lee, Woocheol
- Shin, Jiwon
- Kim, Jae-Keun
- Kim, Jaeyoung
- Pak, Jinsu
- Lee, Takhee
- SpringerLink (Online service)
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