Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Optics Express, 25, (23), Optical Publishing, ISSN 1094-4087
- Ereignis
-
Veröffentlichung
- (wo)
-
Darmstadt
- (wer)
-
Universitäts- und Landesbibliothek
- (wann)
-
2025
- Urheber
- DOI
-
10.26083/tuprints-00019845
- URN
-
urn:nbn:de:tuda-tuprints-198454
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:36 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Fernandez Olvera, Anuar de Jesus
- Lu, H.
- Gossard, Arthur C.
- Preu, Sascha
- Universitäts- und Landesbibliothek
Entstanden
- 2025
Ähnliche Objekte (12)
Continuous-wave, tunable THz n-i-pn-i-p superlattice photomixers and applications
ErAs:In(Al)GaAs Photoconductive Mixers as Continuous-Wave Terahertz Detectors: Modelling and Applications
A Fully Optoelectronic Continuous-Wave 2-Port Vector Network Analyzer Operating From 0.1 THz to 1 THz
Tunable, continuous-wave Terahertz photomixer sources and applications
ErAs:In(Al)GaAs photoconductors for 1550 nm-based Terahertz time domain spectroscopy systems
A Comparison of Continuous-Wave and Pulsed Free Space 2-Port Photonic Vector Network Analyzers for Terahertz Characterization
Emulating a broadband frequency sweep for Terahertz thin-film imaging
Characterization of a Crossed Dipole Resonator Array using a Pulsed Free Space Two-Port Photonic VNA
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers
Terahertz Time-Domain Spectroscopy Based on Commercially Available 1550 nm Fabry–Perot Laser Diode and ErAs:In(Al)GaAs Photoconductors
1550 nm ErAs:In(Al)GaAs large area photoconductive emitters
Continuous-wave, tunable THz n-i-pn-i-p superlattice photomixers and applications
ErAs:In(Al)GaAs Photoconductive Mixers as Continuous-Wave Terahertz Detectors: Modelling and Applications
A Fully Optoelectronic Continuous-Wave 2-Port Vector Network Analyzer Operating From 0.1 THz to 1 THz
Tunable, continuous-wave Terahertz photomixer sources and applications
ErAs:In(Al)GaAs photoconductors for 1550 nm-based Terahertz time domain spectroscopy systems
A Comparison of Continuous-Wave and Pulsed Free Space 2-Port Photonic Vector Network Analyzers for Terahertz Characterization
Emulating a broadband frequency sweep for Terahertz thin-film imaging
Characterization of a Crossed Dipole Resonator Array using a Pulsed Free Space Two-Port Photonic VNA
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers
Terahertz Time-Domain Spectroscopy Based on Commercially Available 1550 nm Fabry–Perot Laser Diode and ErAs:In(Al)GaAs Photoconductors
1550 nm ErAs:In(Al)GaAs large area photoconductive emitters
Continuous-wave, tunable THz n-i-pn-i-p superlattice photomixers and applications
ErAs:In(Al)GaAs Photoconductive Mixers as Continuous-Wave Terahertz Detectors: Modelling and Applications
A Fully Optoelectronic Continuous-Wave 2-Port Vector Network Analyzer Operating From 0.1 THz to 1 THz
Tunable, continuous-wave Terahertz photomixer sources and applications
ErAs:In(Al)GaAs photoconductors for 1550 nm-based Terahertz time domain spectroscopy systems
A Comparison of Continuous-Wave and Pulsed Free Space 2-Port Photonic Vector Network Analyzers for Terahertz Characterization
Emulating a broadband frequency sweep for Terahertz thin-film imaging
Characterization of a Crossed Dipole Resonator Array using a Pulsed Free Space Two-Port Photonic VNA
Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors
2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers
Terahertz Time-Domain Spectroscopy Based on Commercially Available 1550 nm Fabry–Perot Laser Diode and ErAs:In(Al)GaAs Photoconductors