Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon

The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to turn silicon into a luminescent material, which has been explored for decades. One of the main challenges is the strong thermal quenching effect that results in weak photoluminescence (PL) efficiency. Herein, it is shown that the co‐doping of fluorine with erbium ions can significantly suppress the thermal quenching effect and Auger recombination, resulting in a three‐order‐of‐magnitude increase in PL compared to Er/O‐doped crystalline silicon. As a result, relatively strong PL is observed from fluorine‐doped silicon at room temperature.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon ; day:17 ; month:07 ; year:2022 ; extent:6
Advanced photonics research ; (17.07.2022) (gesamt 6)

Creator
Wang, Xiaoming
He, Jiajing
Jin, Shenbao
Liu, Huan
Li, Hongkai
Wen, Huimin
Zhao, Xingyan
Abedini-Nassab, Roozbeh
Sha, Gang
Yue, Fangyu
Dan, Yaping

DOI
10.1002/adpr.202200115
URN
urn:nbn:de:101:1-2022071815072385856531
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:29 AM CEST

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Associated

  • Wang, Xiaoming
  • He, Jiajing
  • Jin, Shenbao
  • Liu, Huan
  • Li, Hongkai
  • Wen, Huimin
  • Zhao, Xingyan
  • Abedini-Nassab, Roozbeh
  • Sha, Gang
  • Yue, Fangyu
  • Dan, Yaping

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