Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon
The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to turn silicon into a luminescent material, which has been explored for decades. One of the main challenges is the strong thermal quenching effect that results in weak photoluminescence (PL) efficiency. Herein, it is shown that the co‐doping of fluorine with erbium ions can significantly suppress the thermal quenching effect and Auger recombination, resulting in a three‐order‐of‐magnitude increase in PL compared to Er/O‐doped crystalline silicon. As a result, relatively strong PL is observed from fluorine‐doped silicon at room temperature.
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon ; day:17 ; month:07 ; year:2022 ; extent:6
Advanced photonics research ; (17.07.2022) (gesamt 6)
- Creator
-
Wang, Xiaoming
He, Jiajing
Jin, Shenbao
Liu, Huan
Li, Hongkai
Wen, Huimin
Zhao, Xingyan
Abedini-Nassab, Roozbeh
Sha, Gang
Yue, Fangyu
Dan, Yaping
- DOI
-
10.1002/adpr.202200115
- URN
-
urn:nbn:de:101:1-2022071815072385856531
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Wang, Xiaoming
- He, Jiajing
- Jin, Shenbao
- Liu, Huan
- Li, Hongkai
- Wen, Huimin
- Zhao, Xingyan
- Abedini-Nassab, Roozbeh
- Sha, Gang
- Yue, Fangyu
- Dan, Yaping