Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque
Abstract: The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an obstacle for device applications. Here, a field‐free switching in a perpendicularly magnetized yttrium iron garnet covered with an oblique deposited Pt with nitrogen incorporation is demonstrated. The spin‐orbit torque efficiency is enhanced with the increasing incorporation ratio of nitrogen in Pt. The maximum effective spin Hall angle of Pt (N) can reach 0.113, which is almost two times larger than that of pure Pt in Pt/YIG. Meanwhile, the switching current density is reduced with the incorporation of nitrogen. These findings open a route toward high‐efficiency SOT driven spintronic devices based on magnetic insulators.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque ; day:09 ; month:04 ; year:2024 ; extent:8
Advanced electronic materials ; (09.04.2024) (gesamt 8)
- Creator
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Bai, He
Li, Jialiang
Ke, Jintao
Guo, Qixun
Zhu, Zhaozhao
Guo, Yaqin
Deng, Xiao
Liu, Dan
Cai, Jianwang
Zhu, Tao
- DOI
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10.1002/aelm.202300785
- URN
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urn:nbn:de:101:1-2024040914284037822634
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:55 AM CEST
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Associated
- Bai, He
- Li, Jialiang
- Ke, Jintao
- Guo, Qixun
- Zhu, Zhaozhao
- Guo, Yaqin
- Deng, Xiao
- Liu, Dan
- Cai, Jianwang
- Zhu, Tao
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