Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1543-186X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology ; day:30 ; month:6 ; year:2016 ; pages:1-11
Journal of electronic materials ; (30.6.2016), 1-11
- Creator
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Kopytko, M.
- Contributor
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Jóźwikowski, K.
Martyniuk, P.
Gawron, W.
Madejczyk, P.
Kowalewski, A.
Markowska, O.
Rogalski, A.
Rutkowski, J.
SpringerLink (Online service)
- DOI
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10.1007/s11664-016-4702-3
- URN
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urn:nbn:de:1111-2016070233445
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:51 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kopytko, M.
- Jóźwikowski, K.
- Martyniuk, P.
- Gawron, W.
- Madejczyk, P.
- Kowalewski, A.
- Markowska, O.
- Rogalski, A.
- Rutkowski, J.
- SpringerLink (Online service)
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Optical and infrared detectors
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Triggering Thermal Healing of Large Area MOCVD Grown TMDs at the Trion Dissociation
Mid-Wavelength Infrared nBn for HOT Detectors
Substitutional p‐Type Doping in NbS 2 –MoS 2 Lateral Heterostructures Grown by MOCVD
Uncooled infrared detectors based on nanometer-thin metal films
On-chip mid-infrared photothermoelectric detectors for full-Stokes detection
Development of infrared silicon BIB detectors with integrated linear amplification
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD
Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures
Optical and infrared detectors
Optical and infrared detectors
Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures
Triggering Thermal Healing of Large Area MOCVD Grown TMDs at the Trion Dissociation
Mid-Wavelength Infrared nBn for HOT Detectors
Substitutional p‐Type Doping in NbS 2 –MoS 2 Lateral Heterostructures Grown by MOCVD
Uncooled infrared detectors based on nanometer-thin metal films
On-chip mid-infrared photothermoelectric detectors for full-Stokes detection
Development of infrared silicon BIB detectors with integrated linear amplification
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)