Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2045-2322
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses ; volume:12 ; number:1 ; day:8 ; month:10 ; year:2022 ; pages:1-7 ; date:12.2022
Scientific reports ; 12, Heft 1 (8.10.2022), 1-7, 12.2022

Classification
Elektrotechnik, Elektronik

Creator
Zhao, Jingtao
Chen, Quanyou
Chen, Chaoyang
Chen, Zhidong
Liu, Zhong
Zhao, Gang
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-022-21324-y
URN
urn:nbn:de:101:1-2022122621150236441729
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:22 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Associated

  • Zhao, Jingtao
  • Chen, Quanyou
  • Chen, Chaoyang
  • Chen, Zhidong
  • Liu, Zhong
  • Zhao, Gang
  • SpringerLink (Online service)

Other Objects (12)