Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses ; volume:12 ; number:1 ; day:8 ; month:10 ; year:2022 ; pages:1-7 ; date:12.2022
Scientific reports ; 12, Heft 1 (8.10.2022), 1-7, 12.2022
- Classification
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Elektrotechnik, Elektronik
- Creator
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Zhao, Jingtao
Chen, Quanyou
Chen, Chaoyang
Chen, Zhidong
Liu, Zhong
Zhao, Gang
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-022-21324-y
- URN
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urn:nbn:de:101:1-2022122621150236441729
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:22 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zhao, Jingtao
- Chen, Quanyou
- Chen, Chaoyang
- Chen, Zhidong
- Liu, Zhong
- Zhao, Gang
- SpringerLink (Online service)