From Fully Strained to Relaxed: Epitaxial Ferroelectric Al1‐xScxN for III‐N Technology
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Advanced functional materials : full papers, feature articles, highlights(32), H. 21 - ISSN 1616-301X
In: Wiley, Weinheim
- Klassifikation
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Chemie
- Ereignis
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Veröffentlichung
- (wo)
-
Kiel
- (wer)
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Universitätsbibliothek Kiel
- (wann)
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2022
- Urheber
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Schönweger, Georg Martin
Petraru, Adrian
Islam, Md Redwanul
Wolff, Niklas
Haas, Benedikt
Hammud, Adnan
Koch, Christoph
Kienle, Lorenz
Kohlstedt, Hermann
Fichtner, Simon
- URN
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urn:nbn:de:gbv:8:3-2024-00549-0
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:49 MESZ
Datenpartner
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Beteiligte
- Schönweger, Georg Martin
- Petraru, Adrian
- Islam, Md Redwanul
- Wolff, Niklas
- Haas, Benedikt
- Hammud, Adnan
- Koch, Christoph
- Kienle, Lorenz
- Kohlstedt, Hermann
- Fichtner, Simon
- Universitätsbibliothek Kiel
Entstanden
- 2022
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From Fully Strained to Relaxed: Epitaxial Ferroelectric Al 1‐ x Sc x N for III‐N Technology
Polar Bloch points in strained ferroelectric films
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Controlled strained layer epitaxial growth of EuTiO3 on buffered silicon
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From Fully Strained to Relaxed: Epitaxial Ferroelectric Al 1‐ x Sc x N for III‐N Technology
Polar Bloch points in strained ferroelectric films
Morphological Relaxation of Strained Epitaxial Films for Stripe‐Geometry Devices
Controlled strained layer epitaxial growth of EuTiO3 on buffered silicon
Reversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films
An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory
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Induced high-temperature ferromagnetism by structural phase transitions in strained antiferromagnetic γ-Fe50Mn50 epitaxial films
Controlling the Polarization in Ferroelectric PZT Films via the Epitaxial Growth Conditions
Structural defects and local chemistry across ferroelectric–electrode interfaces in epitaxial heterostructures
Epitaxial ferroelectric all-oxide varactors for application in reconfigurable RF front ends