Preparation and characterization of V2O5 doped SiO2-TiO2 thin films
Abstract: In our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Preparation and characterization of V2O5 doped SiO2-TiO2 thin films ; volume:2 ; number:1 ; year:2012 ; pages:123-128 ; extent:6
Open engineering ; 2, Heft 1 (2012), 123-128 (gesamt 6)
- Creator
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Nocuń, Marek
Kwaśny, Sławomir
- DOI
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10.2478/s13531-011-0041-6
- URN
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urn:nbn:de:101:1-2412141742513.080269569105
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:19 AM CEST
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Associated
- Nocuń, Marek
- Kwaśny, Sławomir
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