Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing ; volume:12 ; number:1 ; day:9 ; month:3 ; year:2017 ; pages:1-6 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (9.3.2017), 1-6, 12.2017

Classification
Physik

Creator
Xu, Hongtao
Contributor
Wu, Changjin
Xiahou, Zhao
Jung, Ranju
Li, Ying
Liu, Chunli
SpringerLink (Online service)

DOI
10.1186/s11671-017-1949-4
URN
urn:nbn:de:1111-20170401922
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:00 AM CEST

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Associated

  • Xu, Hongtao
  • Wu, Changjin
  • Xiahou, Zhao
  • Jung, Ranju
  • Li, Ying
  • Liu, Chunli
  • SpringerLink (Online service)

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