Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions ; volume:11 ; pages:688-694
Beilstein journal of nanotechnology ; 11, 688-694
- Classification
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Ingenieurwissenschaften und Maschinenbau
- DOI
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10.3762/bjnano.11.56
- URN
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urn:nbn:de:101:1-2020120215381035838393
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:32 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.