Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions ; volume:11 ; pages:688-694
Beilstein journal of nanotechnology ; 11, 688-694

Classification
Ingenieurwissenschaften und Maschinenbau

DOI
10.3762/bjnano.11.56
URN
urn:nbn:de:101:1-2020120215381035838393
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:32 AM CEST

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