Near‐Sensor Reservoir Computing for Gait Recognition via a Multi‐Gate Electrolyte‐Gated Transistor
Abstract: The recent emergence of various smart wearable electronics has furnished the rapid development of human–computer interaction, medical health monitoring technologies, etc. Unfortunately, processing redundant motion and physiological data acquired by multiple wearable sensors using conventional off‐site digital computers typically result in serious latency and energy consumption problems. In this work, a multi‐gate electrolyte‐gated transistor (EGT)‐based reservoir device for efficient multi‐channel near‐sensor computing is reported. The EGT, exhibiting rich short‐term dynamics under voltage modulation, can implement nonlinear parallel integration of the time‐series signals thus extracting the temporal features such as the synchronization state and collective frequency in the inputs. The flexible EGT integrated with pressure sensors can perform on‐site gait information analysis, enabling the identification of motion behaviors and Parkinson's disease. This near‐sensor reservoir computing system offers a new route for rapid analysis of the motion and physiological signals with significantly improved efficiency and will lead to robust smart flexible wearable electronics.
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Near‐Sensor Reservoir Computing for Gait Recognition via a Multi‐Gate Electrolyte‐Gated Transistor ; day:22 ; month:03 ; year:2023 ; extent:9
Advanced science ; (22.03.2023) (gesamt 9)
- Urheber
-
Liu, Xuerong
Sun, Cui
Guo, Zhecheng
Xia, Xiangling
Jiang, Qian
Ye, Xiaoyu
Shang, Jie
Zhang, Yuejun
Zhu, Xiaojian
Li, Run‐Wei
- DOI
-
10.1002/advs.202300471
- URN
-
urn:nbn:de:101:1-2023032314315998000391
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:02 MESZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Liu, Xuerong
- Sun, Cui
- Guo, Zhecheng
- Xia, Xiangling
- Jiang, Qian
- Ye, Xiaoyu
- Shang, Jie
- Zhang, Yuejun
- Zhu, Xiaojian
- Li, Run‐Wei
Ähnliche Objekte (12)
Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors
Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors
Electrolyte-gated transistor for carbon dioxide sensing
Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors
Reusable Cellulose‐Based Hydrogel Sticker Film Applied as Gate Dielectric in Paper Electrolyte‐Gated Transistors
Electrolyte-gated organic field-effect transistors for biosensing applications
Flexible electrolyte gated organic field effect transistors for sensing
Sensing Inflammation Biomarkers with Electrolyte‐Gated Organic Electronic Transistors
Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching
General Model for Charge Carriers Transport in Electrolyte‐Gated Transistors
Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning
Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics
Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors
Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors
Electrolyte-gated transistor for carbon dioxide sensing
Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors
Reusable Cellulose‐Based Hydrogel Sticker Film Applied as Gate Dielectric in Paper Electrolyte‐Gated Transistors
Electrolyte-gated organic field-effect transistors for biosensing applications
Flexible electrolyte gated organic field effect transistors for sensing
Sensing Inflammation Biomarkers with Electrolyte‐Gated Organic Electronic Transistors
Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching
General Model for Charge Carriers Transport in Electrolyte‐Gated Transistors
Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning
Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics
Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors
Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors
Electrolyte-gated transistor for carbon dioxide sensing
Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors
Reusable Cellulose‐Based Hydrogel Sticker Film Applied as Gate Dielectric in Paper Electrolyte‐Gated Transistors
Electrolyte-gated organic field-effect transistors for biosensing applications
Flexible electrolyte gated organic field effect transistors for sensing
Sensing Inflammation Biomarkers with Electrolyte‐Gated Organic Electronic Transistors
Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching
General Model for Charge Carriers Transport in Electrolyte‐Gated Transistors
Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning