Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism ; day:17 ; month:02 ; year:2022 ; extent:10
Advanced electronic materials ; (17.02.2022) (gesamt 10)

Creator
Heisig, Thomas
Lange, Kristof
Gutsche, Alexander
Goß, Kalle Thorben
Hambsch, Sebastian
Locatelli, Andrea
Menteş, Tevfik Onur
Genuzio, Francesca
Menzel, Stephan
Dittmann, Regina

DOI
10.1002/aelm.202100936
URN
urn:nbn:de:101:1-2022021714354220065138
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:34 AM CEST

Data provider

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Associated

  • Heisig, Thomas
  • Lange, Kristof
  • Gutsche, Alexander
  • Goß, Kalle Thorben
  • Hambsch, Sebastian
  • Locatelli, Andrea
  • Menteş, Tevfik Onur
  • Genuzio, Francesca
  • Menzel, Stephan
  • Dittmann, Regina

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