Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
-
Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor ; volume:19 ; number:1 ; day:23 ; month:8 ; year:2024 ; pages:1-11 ; date:12.2024
Discover nano ; 19, Heft 1 (23.8.2024), 1-11, 12.2024
- Creator
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Kim, Yijoon
Kim, Hyangwoo
Oh, Kyounghwan
Park, Ju Hong
Kong, Byoung Don
Baek, Chang-Ki
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-024-04079-5
- URN
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urn:nbn:de:101:1-2411120910038.264390692270
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:30 AM CEST
Data provider
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Associated
- Kim, Yijoon
- Kim, Hyangwoo
- Oh, Kyounghwan
- Park, Ju Hong
- Kong, Byoung Don
- Baek, Chang-Ki
- SpringerLink (Online service)
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