Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing ; volume:10 ; number:1 ; day:14 ; month:9 ; year:2023 ; pages:1-20 ; date:12.2023
Nano Convergence ; 10, Heft 1 (14.9.2023), 1-20, 12.2023
- Classification
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Elektrotechnik, Elektronik
- Creator
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Hellenbrand, Markus
MacManus-Driscoll, Judith
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s40580-023-00392-4
- URN
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urn:nbn:de:101:1-2024020515311959520469
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:27 AM CEST
Data provider
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Associated
- Hellenbrand, Markus
- MacManus-Driscoll, Judith
- SpringerLink (Online service)
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Picosecond multilevel resistive switching in tantalum oxide thin films
Resistive Switching Effect in Ag‐poly (ethylene Glycol) Nanofluids: Novel Avenue Toward Neuromorphic Materials
Electrochemical Oxidation Induced Multi-Level Memory in Carbon-Based Resistive Switching Devices
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Filament Dynamics in Resistive Switching
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Hafnium oxide based memristive devices as functional elements of neuromorphic circuits
Hafnium oxide based memristive devices as functional elements of neuromorphic circuits
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories
Picosecond multilevel resistive switching in tantalum oxide thin films
Resistive Switching Effect in Ag‐poly (ethylene Glycol) Nanofluids: Novel Avenue Toward Neuromorphic Materials
Electrochemical Oxidation Induced Multi-Level Memory in Carbon-Based Resistive Switching Devices
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Filament Dynamics in Resistive Switching
Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices
Hafnium oxide based memristive devices as functional elements of neuromorphic circuits