Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films
Herein, the self‐assembled formation of AlN nanowires (NWs) by molecular beam epitaxy on sputtered TiN films on sapphire is demonstrated. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the NWs are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the NW sidewalls. The high crystalline quality of the NWs is evidenced by the observation of near‐band‐edge emission in the cathodoluminescence spectrum. The key factor for the low NW coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices using these NWs as the basis for (Al,Ga) N/AlN heterostructures emitting in the deep ultraviolet spectral range.
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films ; volume:14 ; number:3 ; year:2020 ; extent:5
Physica status solidi / Rapid research letters. Rapid research letters ; 14, Heft 3 (2020) (gesamt 5)
- Urheber
-
Azadmand, Mani
Auzelle, Thomas
Lähnemann, Jonas
Gao, Guanhui
Nicolai, Lars
Ramsteiner, Manfred
Trampert, Achim
Sanguinetti, Stefano
Brandt, Oliver
Geelhaar, Lutz
- DOI
-
10.1002/pssr.201900615
- URN
-
urn:nbn:de:101:1-2022062611194512703921
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:37 MESZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Azadmand, Mani
- Auzelle, Thomas
- Lähnemann, Jonas
- Gao, Guanhui
- Nicolai, Lars
- Ramsteiner, Manfred
- Trampert, Achim
- Sanguinetti, Stefano
- Brandt, Oliver
- Geelhaar, Lutz
Ähnliche Objekte (12)
Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates
ALN
The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films
Übersichtskennziffern ALN-Kartoffeln
Hest al'n Wiehnachtsboom?
Klage um Aln Ben.
Meldeunterlagen, Familiennamen Aln-Alr
Structural Subsumption for ALN
ALN for women across Asia
Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film
Impact of Sputtered AZO Seed Layer Thickness on Hydrothermally Grown ZnO Nanowires Properties for Flexible Perovskite Solar Cells
Untersuchungen zur Mikrostruktur in AlN
Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates
ALN
The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films
Übersichtskennziffern ALN-Kartoffeln
Hest al'n Wiehnachtsboom?
Klage um Aln Ben.
Meldeunterlagen, Familiennamen Aln-Alr
Structural Subsumption for ALN
ALN for women across Asia
Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film
Impact of Sputtered AZO Seed Layer Thickness on Hydrothermally Grown ZnO Nanowires Properties for Flexible Perovskite Solar Cells
Untersuchungen zur Mikrostruktur in AlN
Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates
ALN
The effect of substrate bias on the piezoelectric properties of pulse DC magnetron sputtered AlN thin films
Übersichtskennziffern ALN-Kartoffeln
Hest al'n Wiehnachtsboom?
Klage um Aln Ben.
Meldeunterlagen, Familiennamen Aln-Alr
Structural Subsumption for ALN
ALN for women across Asia
Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film
Impact of Sputtered AZO Seed Layer Thickness on Hydrothermally Grown ZnO Nanowires Properties for Flexible Perovskite Solar Cells