- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: 10.1088/1367-2630/ad7f7d
- Ereignis
-
Veröffentlichung
- (wo)
-
Aachen
- (wer)
-
Universitätsbibliothek der RWTH Aachen
- (wann)
-
2024
- Urheber
-
Wolff, Susanne
Hutter, Mark
Schädlich, Philip
Yin, Hao
Stettner, Monja
Wenzel, Sabine
Tautz, Frank Stefan
Bocquet, François C.
Seyller, Thomas
Kumpf, Christian
- DOI
-
10.18154/RWTH-2024-10090
- URN
-
urn:nbn:de:101:1-2410300117059.607757020112
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:20 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Wolff, Susanne
- Hutter, Mark
- Schädlich, Philip
- Yin, Hao
- Stettner, Monja
- Wenzel, Sabine
- Tautz, Frank Stefan
- Bocquet, François C.
- Seyller, Thomas
- Kumpf, Christian
- Universitätsbibliothek der RWTH Aachen
Entstanden
- 2024
Ähnliche Objekte (12)
Superconductivity of potassium-intercalated epitaxial graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H−SiC(0001)
Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Large-area epitaxial graphene on SiC(0001): from decoupling to interface engineering
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
Quantum transport in epitaxial graphene on silicon carbide (0001)
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge‐Neutral Epitaxial Graphene
Instrumentation of the Positron Diffractometer at NEPOMUC and Measurements on Epitaxial Graphene Grown on 6H-SiC(0001)
Superconductivity of potassium-intercalated epitaxial graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H−SiC(0001)
Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Large-area epitaxial graphene on SiC(0001): from decoupling to interface engineering
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
Quantum transport in epitaxial graphene on silicon carbide (0001)
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge‐Neutral Epitaxial Graphene
Instrumentation of the Positron Diffractometer at NEPOMUC and Measurements on Epitaxial Graphene Grown on 6H-SiC(0001)
Superconductivity of potassium-intercalated epitaxial graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Superconductivity of K‐Intercalated Epitaxial Bilayer Graphene
Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H−SiC(0001)
Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Large-area epitaxial graphene on SiC(0001): from decoupling to interface engineering
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
Quantum transport in epitaxial graphene on silicon carbide (0001)
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge‐Neutral Epitaxial Graphene