Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique ; volume:11 ; number:1 ; day:4 ; month:5 ; year:2016 ; pages:1-9 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (4.5.2016), 1-9, 12.2016
- Creator
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Chen, Hugo Juin-Yu
- Contributor
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Yang, Dian-Long
Huang, Tseh-Wet
Yu, Ing-Song
SpringerLink (Online service)
- DOI
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10.1186/s11671-016-1455-0
- URN
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urn:nbn:de:1111-2016050514798
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:48 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Chen, Hugo Juin-Yu
- Yang, Dian-Long
- Huang, Tseh-Wet
- Yu, Ing-Song
- SpringerLink (Online service)
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Molecular Beam Epitaxy (MBE) Growth of Model Cathodes to Study Interfacial Ion Diffusion
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MBE
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
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