Dynamics at crystal/melt interface during solidification of multicrystalline silicon
Abstract: A fundamental understanding of crystal growth dynamics during directional solidification of multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc-Si ingots for use in solar cells. In situ observation of the crystal/melt interface is a way to obtain direct evidence of phenomena that occur at a moving crystal/melt interface during growth. In this review, some of the phenomena occurring in the solidification processes of mc-Si are introduced based on our in situ observation experiments, after a brief introduction of the history of the development of crystal growth technologies to obtain mc-Si ingots for solar cells.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Dynamics at crystal/melt interface during solidification of multicrystalline silicon ; volume:41 ; number:1 ; year:2022 ; pages:31-47 ; extent:17
High temperature materials and processes ; 41, Heft 1 (2022), 31-47 (gesamt 17)
- Urheber
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Fujiwara, Kozo
Chuang, Lu-Chung
Maeda, Kensaku
- DOI
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10.1515/htmp-2022-0020
- URN
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urn:nbn:de:101:1-2022072114022535671237
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:32 MESZ
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Beteiligte
- Fujiwara, Kozo
- Chuang, Lu-Chung
- Maeda, Kensaku
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