Dynamics at crystal/melt interface during solidification of multicrystalline silicon

Abstract: A fundamental understanding of crystal growth dynamics during directional solidification of multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc-Si ingots for use in solar cells. In situ observation of the crystal/melt interface is a way to obtain direct evidence of phenomena that occur at a moving crystal/melt interface during growth. In this review, some of the phenomena occurring in the solidification processes of mc-Si are introduced based on our in situ observation experiments, after a brief introduction of the history of the development of crystal growth technologies to obtain mc-Si ingots for solar cells.

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• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Dynamics at crystal/melt interface during solidification of multicrystalline silicon ; volume:41 ; number:1 ; year:2022 ; pages:31-47 ; extent:17 ; High temperature materials and processes ; 41, Heft 1 (2022), 31-47 (gesamt 17)

Contributors, Places and Time

• Creator: Fujiwara, Kozo ; Chuang, Lu-Chung ; Maeda, Kensaku

Further information

• DOI: 10.1515/htmp-2022-0020
• URN: urn:nbn:de:101:1-2022072114022535671237
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.