Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness ; volume:15 ; number:1 ; day:15 ; month:6 ; year:2020 ; pages:1-9 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (15.6.2020), 1-9, 12.2020
- Classification
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Wirtschaft
- Creator
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Zhang, Maolin
Guo, Yufeng
Zhang, Jun
Yao, Jiafei
Chen, Jing
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-020-03360-7
- URN
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urn:nbn:de:101:1-2020081222144587453979
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:01 AM CEST
Data provider
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Associated
- Zhang, Maolin
- Guo, Yufeng
- Zhang, Jun
- Yao, Jiafei
- Chen, Jing
- SpringerLink (Online service)
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