Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks ; day:29 ; month:12 ; year:2022 ; extent:10
Physica status solidi / B. B, Basic solid state physics ; (29.12.2022) (gesamt 10)
- Creator
-
Meier, Falco
Littmann, Mario
Bürger, Julius
Riedl, Thomas
Kool, Daniel
Lindner, Jörg
Reuter, Dirk
As, Donat Josef
- DOI
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10.1002/pssb.202200508
- URN
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urn:nbn:de:101:1-2022123014084108424051
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 15.08.2025, 7:38 AM CEST
Data provider
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Associated
- Meier, Falco
- Littmann, Mario
- Bürger, Julius
- Riedl, Thomas
- Kool, Daniel
- Lindner, Jörg
- Reuter, Dirk
- As, Donat Josef
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Aluminium and Gallium Silylimides as Nitride Sources **
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Crystal Orientation Dependence of Gallium Nitride Wear
Properties of nanocrystalline cubic boron nitride films
Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy
Gallium nitride electronics
Remote epitaxy of cubic gallium nitride on graphene-covered 3C-SiC substrates
Technology of gallium nitride crystal growth
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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
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Aluminium and Gallium Silylimides as Nitride Sources **
Indium gallium nitride nanostructures for optoelectronic applications
Electrolyte Effect on Photoetching of Gallium Nitride
Crystal Orientation Dependence of Gallium Nitride Wear