Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing ; day:15 ; month:03 ; year:2024 ; extent:12
Advanced science ; (15.03.2024) (gesamt 12)
- Creator
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Wang, Jinyong
Ren, Yujing
Yang, Ze
Lv, Qiaoya
Zhang, Yu
Zhang, Mingyue
Zhao, Tiancheng
Gu, Deen
Liu, Fucai
Tang, Baoshan
Yang, Weifeng
Lin, Zhiqun
- DOI
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10.1002/advs.202309538
- URN
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urn:nbn:de:101:1-2024031613282615493481
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
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Associated
- Wang, Jinyong
- Ren, Yujing
- Yang, Ze
- Lv, Qiaoya
- Zhang, Yu
- Zhang, Mingyue
- Zhao, Tiancheng
- Gu, Deen
- Liu, Fucai
- Tang, Baoshan
- Yang, Weifeng
- Lin, Zhiqun
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Filament-free memristors for computing
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In‐Memory Database Query
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Electroplating on Electrically Conductive Filaments for Additive Manufacturing
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions
Characterization and Modeling of Anisotropic Electrically Conductive Composite Filaments comprising PMMA and Carbon Fillers
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In-Memory Interval Joins