The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: IOP Conference Series Materials Science and Engineering 56.1 (2014): 01.04.2014
- Classification
-
Physik
- Keyword
-
-
- Event
-
Veröffentlichung
- (where)
-
Erlangen
- (who)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
-
2014
- Contributor
-
Schimmel, Saskia
Kaiser, Michl
Jokubavicius, V.
Ou, Y.
Hens, P.
Linnarsson, M. K.
Sun, J.
Liljedahl, R.
Ou, H.
Syväjärvi, M.
Wellmann, Peter
- URN
-
urn:nbn:de:bvb:29-opus4-44345
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:53 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Schimmel, Saskia
- Kaiser, Michl
- Jokubavicius, V.
- Ou, Y.
- Hens, P.
- Linnarsson, M. K.
- Sun, J.
- Liljedahl, R.
- Ou, H.
- Syväjärvi, M.
- Wellmann, Peter
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2014
Other Objects (12)
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
In situ bow reduction during sublimation growth of cubic silicon carbide
Graphitic carbon grown on fluorides by molecular beam epitaxy
Sublimation.
About heteropolytypic structures : molecular beam epitaxy, characterization and properties of silicon carbide
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
On the doping of Silicon nanowires grown by molecular beam epitaxy
Electrical characterization of ZnO thin films grown by molecular beam epitaxy
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
In situ bow reduction during sublimation growth of cubic silicon carbide
Graphitic carbon grown on fluorides by molecular beam epitaxy
Sublimation.
About heteropolytypic structures : molecular beam epitaxy, characterization and properties of silicon carbide
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
On the doping of Silicon nanowires grown by molecular beam epitaxy
Electrical characterization of ZnO thin films grown by molecular beam epitaxy
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
In situ bow reduction during sublimation growth of cubic silicon carbide
Graphitic carbon grown on fluorides by molecular beam epitaxy
Sublimation.
About heteropolytypic structures : molecular beam epitaxy, characterization and properties of silicon carbide
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
On the doping of Silicon nanowires grown by molecular beam epitaxy
Electrical characterization of ZnO thin films grown by molecular beam epitaxy
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy