Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Hong, S.J.; Xiao, X.; Wulferding, D.; Belke, C.; Lemmens, P. et al.: Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene. In: 2D Materials 8 (2021), Nr. 4, 045009. DOI: https://doi.org/10.1088/2053-1583/ac152e
- Ereignis
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Veröffentlichung
- (wo)
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Hannover
- (wer)
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Gottfried Wilhelm Leibniz Universität Hannover
- (wann)
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2021
- Ereignis
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Veröffentlichung
- (wo)
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Hannover
- (wer)
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Technische Informationsbibliothek (TIB)
- (wann)
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2021
- Urheber
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Hong, Sung Ju
Xiao, Xiao
Wulferding, Dirk
Belke, Christopher
Lemmens, Peter
Haug, Rolf J.
- DOI
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10.15488/16587
- URN
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urn:nbn:de:101:1-2024032801152443415177
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:55 MESZ
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Beteiligte
- Hong, Sung Ju
- Xiao, Xiao
- Wulferding, Dirk
- Belke, Christopher
- Lemmens, Peter
- Haug, Rolf J.
- Gottfried Wilhelm Leibniz Universität Hannover
- Technische Informationsbibliothek (TIB)
Entstanden
- 2021
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