Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: In: Journal of Vacuum Science & Technology (JVST) : an AVS journal#B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena, Erscheinungsjahr: 2019, Jahrgang: 37, Seiten: 021210-1-021210-5, E-ISSN: 2166-2746

Event: Veröffentlichung

(where): Dresden

(who): Technische Universität Dresden

(when): 2022

Creator: Schmult, Stefan
Solovyev, Victor V.
Wirth, Steffen
Großer, Andreas
Mikolajick, Thomas
Kukushkin, Igor V.

URN: urn:nbn:de:bsz:14-qucosa2-811000

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:34 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Schmult, Stefan
Solovyev, Victor V.
Wirth, Steffen
Großer, Andreas
Mikolajick, Thomas
Kukushkin, Igor V.
Technische Universität Dresden

Time of origin

2022

Other Objects (12)

Hochschulschrift

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

Hochschulschrift

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Hochschulschrift

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

Hochschulschrift

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Hochschulschrift

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

Hochschulschrift

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Time of origin

Other Objects (12)

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Untersuchungen zu Vanadium-basierten ohmschen Kontakten in AlGaN/GaN-MISHFETs

Entwicklung und Herstellung von GaN-basierten Sperrschicht-Feldeffekttransistoren mit vertikalem Kanal

Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS‐HEMTs

Carbon-doped MBE GaN : Spectroscopic insights

Dependence of Reverse Leakage on the Edge Termination Process in Vertical GaN Power Device

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Towards non-volatility in quantum-dot-based memories

Kombination Resistiver und Ferroelektrischer Schaltmechanismen in HfO2-basierten Bauelementen

One dimensional (1D) nanostructured silicon as anode for rechargeable lithium-ion batteries

Related objects

Reset password