Broadband Quantum Efficiency Enhancement of Al 0.3 InAsSb p–i–n Photodiodes with All‐Dielectric Amorphous Germanium Metasurfaces
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Broadband Quantum Efficiency Enhancement of Al 0.3 InAsSb p–i–n Photodiodes with All‐Dielectric Amorphous Germanium Metasurfaces ; day:10 ; month:07 ; year:2024 ; extent:6
Advanced photonics research ; (10.07.2024) (gesamt 6)
- Urheber
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Wei, Dongxia
Guo, Bingtian
Dadey, Adam A.
McArthur, J. Andrew
Bai, Junwu
Bank, Seth R.
Campbell, Joe C.
- DOI
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10.1002/adpr.202400090
- URN
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urn:nbn:de:101:1-2407101433314.626284143944
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:46 MESZ
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Beteiligte
- Wei, Dongxia
- Guo, Bingtian
- Dadey, Adam A.
- McArthur, J. Andrew
- Bai, Junwu
- Bank, Seth R.
- Campbell, Joe C.
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