Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Abstract: In this paper we present a contactless transient carrier spectroscopy and imaging technique for traps in silicon. At each pixel, we fit the transient decay of the trap emission which allows us to obtain both the trap time constant and trap concentration. Here we show that this technique allows for high-resolution images. furthermore, this technique also allows to discriminate between the presence of thermal donors or oxygen precipitates in as-grown wafers, without requiring a thermal donor killing step

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch
Notes
Scientific Reports. - 9, 1 (2019) , 14268 (2019), ISSN: 2045-2322

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2020
Creator
Rougieux, Fiacre E.
Kwapil, Wolfram
Heinz, Friedemann D.
Siriwardhana, Manjula
Schubert, Martin

DOI
10.1038/s41598-019-49804-8
URN
urn:nbn:de:bsz:25-freidok-1659960
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:46 AM CEST

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Associated

Time of origin

  • 2020

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