Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon ; volume:4 ; number:1 ; day:5 ; month:12 ; year:2023 ; pages:1-9 ; date:12.2023
Communications materials ; 4, Heft 1 (5.12.2023), 1-9, 12.2023
- Klassifikation
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Physik
- Urheber
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Myronov, Maksym
Waldron, Philip
Barrios, Pedro
Bogan, Alex
Studenikin, Sergei
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s43246-023-00431-x
- URN
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urn:nbn:de:101:1-2024022113460414605962
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:50 MESZ
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Beteiligte
- Myronov, Maksym
- Waldron, Philip
- Barrios, Pedro
- Bogan, Alex
- Studenikin, Sergei
- SpringerLink (Online service)
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