Recent Advances in Flexible Field‐Effect Transistors toward Wearable Sensors
The introduction of the “Internet of Things” (IoTs) concept has spawned a series of research and development of wearable sensors. Flexible field‐effect transistors (FETs) are considered to be potential sensing devices due to the variety of material utilization and the self‐amplifying function on electrical signals. FETs have demonstrated the ability of detecting different kinds of external stimuli and continuous monitoring functionalities. Herein, the recent progress achieved by the academia in wearable sensors based on flexible FETs, including pressure, temperature, chemical, and biological analytes, which are vital for the manufacturing of smart wearable devices, is summarized. The sensing mechanism for different sensors is introduced and an in‐depth discussion is presented, including material engineering, problems at the current stage, and future challenges.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Recent Advances in Flexible Field‐Effect Transistors toward Wearable Sensors ; volume:2 ; number:11 ; year:2020 ; extent:26
Advanced intelligent systems ; 2, Heft 11 (2020) (gesamt 26)
- Urheber
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Li, Ming-Zheng
Han, Su-Ting
Zhou, Ye
- DOI
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10.1002/aisy.202000113
- URN
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urn:nbn:de:101:1-2022062910374751175747
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:29 MESZ
Datenpartner
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Li, Ming-Zheng
- Han, Su-Ting
- Zhou, Ye
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