Hochschulschrift
Sub-0.2 μm [my m] double sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
21 cm
- Umfang
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IV, 143 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
München, Techn. Univ., Diss., 1997
- Schlagwort
-
HEMT
Indiumarsenid
Aluminiumarsenid
Galliumarsenid
Indiumphosphid
- Urheber
-
Xu, Dong
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:39 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Xu, Dong
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