Wafer-scale nanofabrication of sub-5 nm gaps in plasmonic metasurfaces
Abstract: In the rapidly evolving field of plasmonic metasurfaces, achieving homogeneous, reliable, and reproducible fabrication of sub-5 nm dielectric nanogaps is a significant challenge. This article presents an advanced fabrication technology that addresses this issue, capable of realizing uniform and reliable vertical nanogap metasurfaces on a whole wafer of 100 mm diameter. By leveraging fast patterning techniques, such as variable-shaped and character projection electron beam lithography (EBL), along with atomic layer deposition (ALD) for defining a few nanometer gaps with sub-nanometer precision, we have developed a flexible nanofabrication technology to achieve gaps as narrow as 2 nm in plasmonic nanoantennas. The quality of our structures is experimentally demonstrated by the observation of resonant localized and collective modes corresponding to the lattice, with Q-factors reaching up to 165. Our technological process opens up new and exciting opportunities to fabricate macroscopic devices harnessing the strong enhancement of light–matter interaction at the single nanometer scale.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Wafer-scale nanofabrication of sub-5 nm gaps in plasmonic metasurfaces ; volume:13 ; number:22 ; year:2024 ; pages:4191-4202 ; extent:12
Nanophotonics ; 13, Heft 22 (2024), 4191-4202 (gesamt 12)
- DOI
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10.1515/nanoph-2024-0343
- URN
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urn:nbn:de:101:1-2409271751323.477030854689
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:38 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
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