Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications ; day:25 ; month:08 ; year:2024 ; extent:9
Advanced materials interfaces ; (25.08.2024) (gesamt 9)

Creator: AlMutairi, AbdulAziz
Xhameni, Aferdita
Guo, Xuyun
Chircă, Irina
Nicolosi, Valeria
Hofmann, Stephan
Lombardo, Antonio

DOI: 10.1002/admi.202400481

URN: urn:nbn:de:101:1-2408261404432.858011008937

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:40 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

AlMutairi, AbdulAziz
Xhameni, Aferdita
Guo, Xuyun
Chircă, Irina
Nicolosi, Valeria
Hofmann, Stephan
Lombardo, Antonio

Other Objects (12)

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Trockenpräparat

Gallium

Kapitel

Gallium

zweidimensionales bewegtes Bild

Gallium

Trockenpräparat

Gallium

Text

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Hochschulschrift

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Akten

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Trockenpräparat

Gallium

Kapitel

Gallium

zweidimensionales bewegtes Bild

Gallium

Trockenpräparat

Gallium

Text

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Hochschulschrift

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Akten

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Trockenpräparat

Gallium

Kapitel

Gallium

zweidimensionales bewegtes Bild

Gallium

Trockenpräparat

Gallium

Text

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Hochschulschrift

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Akten

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Gallium

Gallium

Gallium

Gallium

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Gallium

Gallium

Gallium

Gallium

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Liquid‐Metal Fabrication of Ultrathin Gallium Oxynitride Layers with Tunable Stoichiometry

Gallium

Gallium

Gallium

Gallium

Gallium

Tin Sulfide/Gallium Oxide Heterojunctions for Solar Water Splitting

Vertical Gallium Nitride Power Devices : Fabrication and Characterisation

Diffusion der Gallium-Leerstelle in Gallium-Arsenid

Iron‐Gallium and Cobalt‐Gallium Tetraphosphido Complexes

Gallium: Hallais

Rohstoffrisikobewertung - Gallium

Related objects

Reset password