An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2041-1723
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics ; volume:12 ; number:1 ; day:28 ; month:1 ; year:2021 ; pages:1-7 ; date:12.2021
Nature Communications ; 12, Heft 1 (28.1.2021), 1-7, 12.2021
- Creator
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Liu, Shun-Chang
Dai, Chen-Min
Min, Yimeng
Hou, Yi
Proppe, Andrew H.
Zhou, Ying
Chen, Chao
Chen, Shiyou
Tang, Jiang
Xue, Ding-Jiang
Sargent, Edward H.
Hu, Jin-Song
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41467-021-20955-5
- URN
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urn:nbn:de:101:1-2021031420490194402216
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:38 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Liu, Shun-Chang
- Dai, Chen-Min
- Min, Yimeng
- Hou, Yi
- Proppe, Andrew H.
- Zhou, Ying
- Chen, Chao
- Chen, Shiyou
- Tang, Jiang
- Xue, Ding-Jiang
- Sargent, Edward H.
- Hu, Jin-Song
- SpringerLink (Online service)