An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
2041-1723
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics ; volume:12 ; number:1 ; day:28 ; month:1 ; year:2021 ; pages:1-7 ; date:12.2021
Nature Communications ; 12, Heft 1 (28.1.2021), 1-7, 12.2021

Creator
Liu, Shun-Chang
Dai, Chen-Min
Min, Yimeng
Hou, Yi
Proppe, Andrew H.
Zhou, Ying
Chen, Chao
Chen, Shiyou
Tang, Jiang
Xue, Ding-Jiang
Sargent, Edward H.
Hu, Jin-Song
Contributor
SpringerLink (Online service)

DOI
10.1038/s41467-021-20955-5
URN
urn:nbn:de:101:1-2021031420490194402216
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:38 AM CEST

Data provider

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Associated

  • Liu, Shun-Chang
  • Dai, Chen-Min
  • Min, Yimeng
  • Hou, Yi
  • Proppe, Andrew H.
  • Zhou, Ying
  • Chen, Chao
  • Chen, Shiyou
  • Tang, Jiang
  • Xue, Ding-Jiang
  • Sargent, Edward H.
  • Hu, Jin-Song
  • SpringerLink (Online service)

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