Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance ; day:19 ; month:03 ; year:2024 ; extent:9
Advanced materials ; (19.03.2024) (gesamt 9)
- Creator
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Shi, Jiacheng
Arpaci, Sevdenur
Lopez‐Dominguez, Victor
Sangwan, Vinod K.
Mahfouzi, Farzad
Kim, Jinwoong
Athas, Jordan G.
Hamdi, Mohammad
Aygen, Can
Arava, Hanu
Phatak, Charudatta
Carpentieri, Mario
Jiang, Jidong S.
Grayson, Matthew A.
Kioussis, Nicholas
Finocchio, Giovanni
Hersam, Mark C.
Khalili Amiri, Pedram
- DOI
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10.1002/adma.202312008
- URN
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urn:nbn:de:101:1-2024032014112195409259
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:49 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Shi, Jiacheng
- Arpaci, Sevdenur
- Lopez‐Dominguez, Victor
- Sangwan, Vinod K.
- Mahfouzi, Farzad
- Kim, Jinwoong
- Athas, Jordan G.
- Hamdi, Mohammad
- Aygen, Can
- Arava, Hanu
- Phatak, Charudatta
- Carpentieri, Mario
- Jiang, Jidong S.
- Grayson, Matthew A.
- Kioussis, Nicholas
- Finocchio, Giovanni
- Hersam, Mark C.
- Khalili Amiri, Pedram