Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance ; day:19 ; month:03 ; year:2024 ; extent:9
Advanced materials ; (19.03.2024) (gesamt 9)

Creator
Shi, Jiacheng
Arpaci, Sevdenur
Lopez‐Dominguez, Victor
Sangwan, Vinod K.
Mahfouzi, Farzad
Kim, Jinwoong
Athas, Jordan G.
Hamdi, Mohammad
Aygen, Can
Arava, Hanu
Phatak, Charudatta
Carpentieri, Mario
Jiang, Jidong S.
Grayson, Matthew A.
Kioussis, Nicholas
Finocchio, Giovanni
Hersam, Mark C.
Khalili Amiri, Pedram

DOI
10.1002/adma.202312008
URN
urn:nbn:de:101:1-2024032014112195409259
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:49 AM CEST

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Associated

  • Shi, Jiacheng
  • Arpaci, Sevdenur
  • Lopez‐Dominguez, Victor
  • Sangwan, Vinod K.
  • Mahfouzi, Farzad
  • Kim, Jinwoong
  • Athas, Jordan G.
  • Hamdi, Mohammad
  • Aygen, Can
  • Arava, Hanu
  • Phatak, Charudatta
  • Carpentieri, Mario
  • Jiang, Jidong S.
  • Grayson, Matthew A.
  • Kioussis, Nicholas
  • Finocchio, Giovanni
  • Hersam, Mark C.
  • Khalili Amiri, Pedram

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