- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2045-2322
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Growth Mechanisms and Electronic Properties of Vertically Aligned MoS2 ; volume:8 ; number:1 ; day:7 ; month:11 ; year:2018 ; pages:1-7 ; date:12.2018
Scientific reports ; 8, Heft 1 (7.11.2018), 1-7, 12.2018
- Creator
-
Stern, Chen
Grinvald, Shmuel
Kirshner, Moshe
Sinai, Ofer
Oksman, Mark
Alon, Hadas
Meiron, Oren E.
Bar-Sadan, Maya
Houben, Lothar
Naveh, Doron
- Contributor
-
SpringerLink (Online service)
- DOI
-
10.1038/s41598-018-34222-z
- URN
-
urn:nbn:de:101:1-2018122023003684149216
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:51 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Stern, Chen
- Grinvald, Shmuel
- Kirshner, Moshe
- Sinai, Ofer
- Oksman, Mark
- Alon, Hadas
- Meiron, Oren E.
- Bar-Sadan, Maya
- Houben, Lothar
- Naveh, Doron
- SpringerLink (Online service)
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Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
Two-dimensional electronic transport and surface electron accumulation in MoS2
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Gas Adsorption Studies on Vertically Aligned Carbon Nanotubes
Electronic structure and exciton shifts in Sb-doped MoS2 monolayer
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
Two-dimensional electronic transport and surface electron accumulation in MoS2
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