How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field ; day:31 ; month:08 ; year:2024 ; extent:12
Laser & photonics reviews ; (31.08.2024) (gesamt 12)
- Creator
- DOI
-
10.1002/lpor.202400529
- URN
-
urn:nbn:de:101:1-2408311414450.833502776199
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:29 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Pristovsek, Markus
- Hu, Nan