Hochschulschrift
Latent gate oxide damage induced by ultra-fast electrostatic discharge
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783891919835
3891919832
- Dimensions
-
21 cm
- Extent
-
IV, 171 S.
- Edition
-
1. Aufl.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 1995
- Bibliographic citation
-
Series in microelectronics ; Vol. 51
- Keyword
-
MOS-Schaltung
Elektrostatische Entladung
Nanosekundenbereich
Gate-Oxid
Werkstoffschädigung
- Event
-
Veröffentlichung
- (where)
-
Konstanz
- (who)
-
Hartung-Gorre
- (when)
-
1995
- Creator
-
Reiner, Joachim C.
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:41 PM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Reiner, Joachim C.
- Hartung-Gorre
Time of origin
- 1995
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