Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites ; day:25 ; month:09 ; year:2022 ; extent:10
Advanced materials ; (25.09.2022) (gesamt 10)
- Urheber
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Bruevich, Vladimir
Kasaei, Leila
Rangan, Sylvie
Hijazi, Hussein
Zhang, Zhenyuan
Emge, Thomas
Andrei, Eva Y.
Bartynski, Robert A.
Feldman, Leonard C.
Podzorov, Vitaly
- DOI
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10.1002/adma.202205055
- URN
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urn:nbn:de:101:1-2022092615100354274210
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:37 MESZ
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Beteiligte
- Bruevich, Vladimir
- Kasaei, Leila
- Rangan, Sylvie
- Hijazi, Hussein
- Zhang, Zhenyuan
- Emge, Thomas
- Andrei, Eva Y.
- Bartynski, Robert A.
- Feldman, Leonard C.
- Podzorov, Vitaly
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Epitaxial engineering of ferrimagnetic double perovskites
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