Eco‐Friendly Approach to Ultra‐Thin Metal Oxides‐ Solution Sheared Aluminum Oxide for Half‐Volt Operation of Organic Field‐Effect Transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Eco‐Friendly Approach to Ultra‐Thin Metal Oxides‐ Solution Sheared Aluminum Oxide for Half‐Volt Operation of Organic Field‐Effect Transistors ; day:02 ; month:07 ; year:2024 ; extent:14
Advanced functional materials ; (02.07.2024) (gesamt 14)

Creator: Dacha, Preetam
Haase, Katherina
Wrzesińska‐Lashkova, Angelika
Pohl, Darius
Maletz, Roman
Millek, Vojtech
Tahn, Alexander
Rellinghaus, Bernd
Dornack, Christina
Vaynzof, Yana
Hambsch, Mike
Mannsfeld, Stefan C. B.

DOI: 10.1002/adfm.202315850

URN: urn:nbn:de:101:1-2407021429064.412774047187

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:57 AM CEST

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Associated

Dacha, Preetam
Haase, Katherina
Wrzesińska‐Lashkova, Angelika
Pohl, Darius
Maletz, Roman
Millek, Vojtech
Tahn, Alexander
Rellinghaus, Bernd
Dornack, Christina
Vaynzof, Yana
Hambsch, Mike
Mannsfeld, Stefan C. B.

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Eco‐Friendly Approach to Ultra‐Thin Metal Oxides‐ Solution Sheared Aluminum Oxide for Half‐Volt Operation of Organic Field‐Effect Transistors

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Other Objects (12)

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Composition and geometric structure of ultrathin oxide films

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Composition and geometric structure of ultrathin oxide films

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