Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene

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Abstract: Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene‐based electronic components. Here, it is shown that a submonolayer of self‐assembled physisorbed molecules can be used as a resist during a post‐synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining n–n’ and p–n junctions in graphene. A scanning tunneling microscopy is used to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be ≈7 nm corresponding to a sharp junction regime.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene ; day:08 ; month:09 ; year:2022 ; extent:8
Advanced functional materials ; (08.09.2022) (gesamt 8)

Creator
Bouatou, Mehdi
Chacon, Cyril
Lorentzen, Aleksander Bach
Ngo, Huu Thoai
Girard, Yann
Repain, Vincent
Bellec, Amandine
Rousset, Sylvie
Brandbyge, Mads
Dappe, Yannick J.
Lagoute, Jérôme

DOI
10.1002/adfm.202208048
URN
urn:nbn:de:101:1-2022090815264861894266
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:31 AM CEST

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Associated

  • Bouatou, Mehdi
  • Chacon, Cyril
  • Lorentzen, Aleksander Bach
  • Ngo, Huu Thoai
  • Girard, Yann
  • Repain, Vincent
  • Bellec, Amandine
  • Rousset, Sylvie
  • Brandbyge, Mads
  • Dappe, Yannick J.
  • Lagoute, Jérôme

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